Communication Dans Un Congrès Année : 2020

Evidencing the Influence of Defects on the Charge Storage Mechanism of Sputtered Vanadium Nitride Pseudocapacitive Electrode

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hal-04303350 , version 1 (23-11-2023)

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  • HAL Id : hal-04303350 , version 1

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Thierry Brousse, Etienne Le Calvez, Kevin Robert, Marielle Huvé, Maya Marinova, et al.. Evidencing the Influence of Defects on the Charge Storage Mechanism of Sputtered Vanadium Nitride Pseudocapacitive Electrode. PRiME 2020 (Pacific Rim Meeting, ECS, ECSJ, KECS Joint Meeting), Oct 2020, Visioconférence, Japan. ⟨hal-04303350⟩
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